Pin diode is formed by sandwiching intrinsic layer high resistivity about 0 1 ω m between p type and n type semiconductor to create an electric field between them.
Pin diode switching characteristics.
At higher frequencies the diode looks like an almost perfect very linear even for large signals resistor.
At a low enough frequency the stored charge can be fully swept and the diode turns off.
Pin diode possesses very low reverse recovery time.
A microwave pin diode is a semiconductor device that operates as a variable resistor at rf and microwave frequencies.
Light striking the crystal lattice can release holes and electrons which are drawn away out of the depletion.
The intrinsic layer in the diode offers a partition between the both the layers permitting higher reverse voltages to be tolerated.
The sensitive area of a photodiode is the depletion region.
This pin diode characteristic can have significant advantages in a number of rf applications for example when a pin diode is used as an rf switch.
The pin diode makes an ideal rf switch.
Characteristics of pin diode low capacitance.
Varactors diodes are design with thin epitaxial i layers for a high q in the.
It has a wide undoped intrinsic semiconductor region i sandwiched between a p type semiconductor p and an n type semiconductor region n hence the pin designation.
The p i n diode has a relatively large stored charge adrift in a thick intrinsic region.
As we already discussed that a pin diode offers a lower value of capacitance due to the larger distance between p and n region.
The pin diode is a special diode which can be configured as an rf switch.
When only a small reverse potential is applied the depletion region gets totally depleted.
The intrinsic layer among the p n layers increases the space between them.
The wide depletion layer provided by the intrinsic layer ensures that pin diodes have a high reverse breakdown characteristic.
Some of the pin diode characteristics are given in the points below.
A pin diode is a current controlled device in contrast to a varactor diode which is a voltage controlled device.
The pin diode is used as an ideal radio frequency switch.
The pin diode can be used as a high voltage rectifier.
The intrinsic layer between the p and n regions increases the distance between them.
The pin diode obeys the standard diode equation for low frequency signals.
The pin diode is used as a high voltage rectifier.
The intrinsic region provides a greater separation between the pn and n regions allowing higher reverse voltages to be tolerated.
The value of tfr may be computed from the forward current if and the initial reverse current ir as follows.
This is unlike a standard diode which has no intrinsic region.
The capacitance of pin diode is independent of bias level as the net charge is said to be very less in the intrinsic layer.
Characteristics of pin diode.